Electrical characterization of nano-MOSFETs in SOI technology
This paper reports about the extensive electrical characterization, with low distortion and greater reliability, of MOSFET Engine devices at nanometric scales with ultra thin Fully Depleted (FD) type architecture on Silicon-On-Insulator (SOI) technology to reduce the short channel effects.The parameters of nMOS type devices of 10x1 μm 2 gate dim